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High-Power 120W Microwave Power Amplifier with 0.5–40 GHz Frequency Range and GaN Semiconductor Technology

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High-Power 120W Microwave Power Amplifier with 0.5–40 GHz Frequency Range and GaN Semiconductor Technology
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Features
Specifications
1: Wireless Communication Equipment
2: Test And Measurement Equipment
3: Navigation And Aerospace
4: Commercial Radars
5: General-purpose Transmitter Amplification
Operating Frequency:: 0.5–40 GHz
Output Power:: 5 W – 120 W
Gain:: 20–60 DB
Noise Figure:: 0.8–2.5 DB
Operating Temperature:: -40°C To +85°C
Storage Temperature:: -55°C To +125°C
VSWR (Voltage Standing Wave Ratio):: ≤1.5:1 (typical)
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0.5–40 GHz Microwave Power Amplifier

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120W RF Amplifier

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GaN Semiconductor Microwave Amplifier
Basic Infomation
Place of Origin: China
Brand Name: SHINHOM
Certification: RoHS/ISO/UL/CE/IATF16949/CNAS
Model Number: Power Amplifier
Document: Power-Amplifier-Low-Noise.pdf
Payment & Shipping Terms
Delivery Time: 2~8weeks
Payment Terms: L/C,T/T
Product Description
Microwave Power Amplifiers
Our microwave power amplifiers are engineered for high-performance RF and millimeter-wave applications, delivering superior signal integrity and robust reliability across frequencies from MHz up to 40 GHz.
Product Overview
Designed for wireless communications, radar systems, aerospace applications, and precision test instruments, these amplifiers are available in broadband, high-power, and low-noise configurations. They combine compact design, high efficiency, and thermal stability to meet modern RF system demands.
Key Features
  • Wide Frequency Coverage: Supports low to high GHz bands for versatile applications
  • High Output & Gain: Ensures strong amplification with stable gain across frequency range
  • Low Noise Option: Ultra-low noise figures for sensitive receiver systems
  • High Efficiency & Reliability: Optimized design for minimal power consumption and long-term stability
  • Compact & Robust Design: Space-saving form factor with durable construction for harsh environments
  • Single Voltage Operation: Simplifies integration into various systems
Applications
  • Wireless Communication Equipment
  • Aerospace & Navigation Systems
  • Commercial & Military Radar
  • Test & Measurement Instruments
  • General-Purpose Transmitters
Product Series
Broadband Power Amplifiers
Designed for reliable performance across broad frequency ranges, these amplifiers deliver high output and consistent gain. Suitable for radar, base stations, and other communication applications requiring stable amplification and efficiency.
Specification Details
Frequency Range 1.5 MHz - 26.5 GHz
Output Power 39-50 dBm
Gain 20-60 dB
Power Supply 220 V AC
High-Power Amplifiers (HPA)
Engineered for high-demand applications, these amplifiers provide output up to 120W with excellent linearity and efficiency. Ideal for mission-critical systems in telecom, aerospace, and radar.
Specification Details
Frequency Coverage DC - 40 GHz
Output Power Up to 120 W
Gain 40-44 dB
Power Supply Single Voltage Supply Operation
Low-Noise Amplifiers (LNA)
Compact LNAs with minimal noise figures and high gain, designed for sensitive RF and microwave receiver systems. Covering multioctave bands, they ensure signal clarity in critical applications.
Specification Details
Frequency Range 200 MHz - 18 GHz
Noise Figure Ultra-low
Gain High & Stable
Integration Connectorized Modules for Easy Integration
Why Choose Our Microwave Power Amplifiers
  • Advanced Technology: Cutting-edge design ensures superior performance
  • Reliable Manufacturing: Rigorous quality control from raw materials to finished products
  • Custom Solutions: Tailored designs available to meet specific application needs
  • Global Support: Comprehensive technical assistance for seamless deployment
Tag:

0.5–40 GHz Microwave Power Amplifier

120W RF Amplifier

GaN Semiconductor Microwave Amplifier

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Get in touch with us
Contact Person : Jack wang
Tel : 13909218465
Fax : 86-029-87851840
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Commercial Plaza , No.8,Yan Ta Northern Road, Xi'an Shaanxi Pro. China.
sales@shinhim.com.cn
13909218465
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