The GT0513 gate driver transformer is a compact push‑pull transformer built for IGBT and MOSFET gate drive and BMS isolation in automotive and industrial systems. Manufactured under IATF16949 and conforming to AEC‑Q200, this isolation transformer delivers stable performance from -40°C to +105°C.
Key Features
4000Vrms basic isolation (600Vrms continuous) with high creepage - ensures safe galvanic separation between primary and secondary circuits
Push‑pull topology - ideal for high‑frequency isolated gate drive and DC‑DC converters
Multiple turns ratios - from 1CT:1.2CT up to 1CT:7CT, supporting various gate voltage levels
Low leakage inductance - 200‑350nH typ., tested at 100kHz
Minimum primary inductance - 200µH for efficient energy transfer
Very low DCR - as low as 0.13Ω on primary, reducing conduction loss
Low interwinding capacitance - ≤159pF, minimizing signal distortion
For a reliable gate driver transformer in space‑constrained, high‑temperature environments, the GT0513 isolation transformer is the proven choice. Its push‑pull architecture and AEC‑Q200 compliance make it especially suitable for automotive battery management and onboard charger systems.