RF Chip Resistor 2W-800W DC-18GHz for Base Stations and Test Equipment

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RF Chip Resistor 2W-800W DC-18GHz for Base Stations and Test Equipment
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Features
Specifications
Perating Frequency: 50-60Hz
Insulationvoltage: 3kV To 5kV
Characteristic: Electric Energy Field Metering
Ampere: 50-300A
Rated Capacity: 1.5VA-2.5VA
Enviroment: Waterproof
Accuracy: 0.5
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Base Stations RF Chip Resistor

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DC-18GHz RF Chip Resistor

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2W-800W RF Chip Resistor

Basic Infomation
Place of Origin: China
Brand Name: SHINHOM
Certification: RoHS/ISO/UL/CE/IATF16949/CNAS
Model Number: CT/CR
Payment & Shipping Terms
Delivery Time: 2~8weeks
Payment Terms: L/C,T/T
Product Description

This series of RF chip resistors, terminations, and attenuators is designed for high-frequency power circuits. It uses AlN (aluminium nitride) or Al₂O₃ (aluminium oxide) substrate materials, offering excellent heat dissipation and thermal stability. Standard impedance is 50Ω. Power range covers 2W to 800W. Frequency range is DC to 18GHz. Multiple package types are available, including chip, leaded, and flange mount styles. These adapt to various RF circuit layout requirements. They are widely used in communication base stations, test and measurement equipment, power amplifiers, isolators.

Features
  • Standard impedance – 50Ω
  • Resistance tolerance – ±3%, ±5%
  • Power range – 2W to 800W
  • Frequency range – DC to 18GHz
  • Substrate material – AlN, Al₂O₃
  • Temperature coefficient – ±150ppm/°C
  • Operating temperature – -55°C to +175°C
  • Electrode material – nickel + silver
Product Specification Selection Table
Series Package Type Power Range (W) Impedance (Ω)
CT Series Flange Mount 2-800 50
CR Series Chip (SMD) 0.2-150 5-3000
T Series Leaded 20-300 50
R Series Leaded 20-250 5-3000
A Series Leaded 100-250 50
TX Series Flange Mount 2-800 50
RX Series Flange Mount 20-250 5-3000
AX Series Flange Mount 100-250 50
QB Series Flange Mount - -
Applications
  • Communication base station power amplifiers
  • RF test and measurement equipment
  • Satellite communication terminals
  • RF isolators and circulators
  • Broadcast television transmission equipment
  • Medical RF equipment
  • Avionics systems
FAQ

Q: What are the advantages of AlN substrate compared to Al₂O₃?

A: AlN (aluminium nitride) offers higher thermal conductivity (approximately 170W/mK), providing better heat dissipation for high-power RF applications. Al₂O₃ (aluminium oxide) is lower in cost and suitable for small to medium power applications. Both offer good insulation and thermal stability. Selection depends on power level and cost budget.

Q: What impact does VSWR have on RF systems?

A: The closer VSWR is to 1:1, the better the impedance matching, resulting in less signal reflection and higher power transfer efficiency. This series offers VSWR as low as 1.20:1, ensuring excellent impedance matching across a wide frequency range and reducing signal reflection and power loss.

Q: How to select the power rating for terminations?

A: The power rating of the termination should be 1.5 to 2 times the actual RF power to ensure long-term reliable operation. Ambient temperature and heat dissipation conditions should also be considered. When operating above 70°C, derating is required per the power derating curve. This series covers 2W to 800W to meet various power requirements.

Q: What package types are supported for this series?

A: Three package types are supported: Chip (SMD) , Leaded , and Flange Mount . Chip type is suitable for automated SMT production lines. Leaded type is suitable for manual soldering and prototyping. Flange mount provides the best heat dissipation and is suitable for high-power applications.

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Contact Person : Jack wang
Tel : 13909218465
Fax : 86-029-87851840
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